1. product profile 1.1 general description 12 w ldmos power transistor for industrial, sci entific and medical (ism) applications at frequencies from 2400 mhz to 2500 mhz. the BLF25M612 and BLF25M612g are drivers designed for high power cw applications and is assembled in a high performance ceramic package. 1.2 features and benefits ? high efficiency ? high power gain ? excellent ruggedness ? excellent thermal stability ? integrated esd protection ? designed for broadband operation (2400 mhz to 2500 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications in the frequency range 2400 mhz to 2500 mhz (this product is qualified accord ing to the solid state cooking profile) BLF25M612; BLF25M612g power ldmos transistor rev. 2 ? 20 june 2013 product data sheet table 1. typical performance rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f v ds p l(av) g p ? d (mhz) (v) (w) (db) (%) cw 2450 28 12 19 60
BLF25M612_BLF25M612g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reser ved. product data sheet rev. 2 ? 20 june 2013 2 of 11 nxp semiconductors BLF25M612; BLF25M612g power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect reliability. table 2. pinning pin description simplified outline graphic symbol BLF25M612 (sot975b) 1drain 2gate 3source [1] BLF25M612g (sot975c) 1drain 2gate 3source [1] 1 2 sym112 1 3 2 1 2 sym112 1 3 2 table 3. ordering information type number package name description version BLF25M612 - earless flanged ceramic package; 2 leads sot975b BLF25M612g - earless flanged ceramic package; 2 leads sot975c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
BLF25M612_BLF25M612g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reser ved. product data sheet rev. 2 ? 20 june 2013 3 of 11 nxp semiconductors BLF25M612; BLF25M612g power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF25M612 and BLF25M612g are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =10ma; p l = 12 w (cw); f = 2450 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 ?c; p l = 12 w 4.0 k/w table 6. dc characteristics t j = 25 ? c per section; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.18ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =18ma 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =28v--1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -3.2-a i gss gate leakage current v gs =11 v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d =0.9a - 1.3 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =0.6a -0.81.3 ? table 7. rf characteristics test signal: cw at f = 2450 mhz; rf performance at v ds = 28 v; i dq = 10 ma; t case = 25 ? c; unless otherwise specified; in a cl ass-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 12 w 17 19 - db rl in input return loss p l = 12 w - ? 14 ? 10 db ? d drain efficiency p l = 12 w 54 60 - %
BLF25M612_BLF25M612g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reser ved. product data sheet rev. 2 ? 20 june 2013 4 of 11 nxp semiconductors BLF25M612; BLF25M612g power ldmos transistor 7.2 impedance information 7.3 test circuit table 8. typical impedance measured load-pull data. typical va lues unless otherwise specified. f z s z l (mhz) (? ) ( ? ) 2400 3.0 ? 11.4j 4.17 ? 3.3j 2450 3.7 ? 11.4j 4.3 ? 2.7j 2500 3.8 ? 11.4j 4.7 ? 4.6j fig 1. definition of transistor impedance 001aaf059 drain z l z s gate printed-circuit board (pcb): rogers 4350b; ? r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 ? m see table 9 for a list of components. fig 2. component layout d d d & |